Turkish Journal of Physics

Impurity Conductivity in Semiconductors Resulting from Radiant Excitation
Vakhab T. TOULANOV, Aziza SH. DAVLETOVA
Tashkent State University, Tashkent - UZBEKISTAN
Lesbek T. TASHİMOV, Kamila A. ORTAEVA
KH. A. Yassavi International Kazakh-Turkish University,
Shimkent Department - KAZAKHSTAN

Abstract: This paper deals with the derivation of common formulae for induced impurity photosensibility with an arbitrary set of energy levels in the semiconductor gap. We give the expression for the real recombinational situation with two types of impurity levels as well. The basic properties and certain common peculiarities concerning induced photoconductivity in semiconductors are under consideration.

Turk. J. Phys., 25, (2001), 513-522.
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Other articles published in the same issue: Turk. J. Phys.,vol.25,iss.6.