Turkish Journal of Physics

Abstract: The temperature dependencies of the thermal power a₀ and thermal conductivity k in two samples of In_{1 - x} Ga_xSb (x=0.65 and 0.45) doped by {Te\sim } 0.001 at%, with electron concentration n = 5.9 \cdot 10¹⁶ and 1.3 \cdot 10¹⁷ cm ^{- 3} (at 100K), have been investigated. It is shown that in In_0.35Ga_0.65Sb a₀ increases with decreasing T below 50K. At 14K a₀ passes through maximum and it falls sharply with decreasing T. It is shown that the maximum value of a₀ is in agreement with the maximum value of k . In In_0.55Ga_0.45Sb, starting from T = 4.2K, a₀ is shown to increase monotonically. For In_0.35Ga_0.65Sb, thermal power due to phonon drag a_ph is derived and its dependence on temperature, a_ph(T), is plotted. It is shown that when a_ph rises with decreasing T, a_ph(T) changes as T^-2.6; and when the curve falls, it is characterized by a power index of 2.8. These results for In_0.35Ga_0.65Sb compare reasonably well to other semiconductors for solid solutions and are in good agreement with Herring theory.