Turkish Journal of PhysicsDetermination of the Values of Band-Edge Discontinuities D Ev and D Ec at the Heterojunction of N-GaSb/n-GaInAsSb Isotype Structures by Photovoltaic Method
Abstract: Values of the potential jumps in the valence band and in the conduction band have been determined by photovoltaic method for N-GaSb/n-GaInAsSb isotype structures fabricated by liquid-phase epitaxy. Measurements of the ratio of photoresponse value to R0 at temperatures over the range 90-360 K have shown a value of potential jump in valence band as much as 0,1 eV. Energy band diagrams have been established for N-GaSb/n-GaInAsSb junctions which show evidence that the junctions corresponds to II-type "staggered" heterojunctions.
Turk. J. Phys., 21, (1997), 1229-1232.
Other articles published in the same issue: Turk. J. Phys.,vol.21,iss.12.