Turkish Journal of PhysicsCharacteristic Growth Features and Etching of SnSe Single Crystals
Abstract: SnSe Single Crystals have been grown by the Bridgman-Stockbarger method. Hexagonal spirals observed on top-free surface of the crystals have been reported. Crystal growth by screw dislocation mechanism has been found to be dominant. A new etchant capable of revealing dislocations intersecting the cleavage plane is also reported.
Turk. J. Phys., 20, (1996), 1041-1044.
Other articles published in the same issue: Turk. J. Phys.,vol.20,iss.9.