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Turkish Journal of Physics

Characteristic Growth Features and Etching of SnSe Single Crystals

S. M. VYAS, G. R. PANDYA, C. F. DESAI,R. C. SHAH

Abstract: SnSe Single Crystals have been grown by the Bridgman-Stockbarger method. Hexagonal spirals observed on top-free surface of the crystals have been reported. Crystal growth by screw dislocation mechanism has been found to be dominant. A new etchant capable of revealing dislocations intersecting the cleavage plane is also reported.

Turk. J. Phys., 20, (1996), 1041-1044.
Other articles published in the same issue: Turk. J. Phys.,vol.20,iss.9.