Turkish Journal of PhysicsAcceptor Levels of Substitutional Zn, Cd and Hg Impurity Atoms in Ge1-xSix Crystals
Abstract: Hall measurement has been carried out for a set of Zn, Cd and Hg-doped Ge1-xSix crystals (0 \leq X \leq 0,3). It is shown that the substitutional Zns and Cds atoms in Ge1-xSix and Si behave as double acceptor as in Ge. In silicon the Hgs atoms give rise to one deep acceptor center. The binding energies of the Zns, Cds and Hgs acceptor states in Ge1-xSix increase linearly with the silicon content. This result agrees qualitatively with the concept of a virtual crystal model. Random-alloy splitting of the Zns, Cds and Hgs impurity levels in the crystals is iscussed.
Turk. J. Phys., 20, (1996), 269-274.
Other articles published in the same issue: Turk. J. Phys.,vol.20,iss.3.