Turkish Journal of Physics

Abstract: Hall measurement has been carried out for a set of Zn, Cd and Hg-doped Ge_1-xSi_x crystals (0 \leq X \leq 0,3). It is shown that the substitutional Zn_s and Cd_s atoms in Ge_1-xSi_x and Si behave as double acceptor as in Ge. In silicon the Hg_s atoms give rise to one deep acceptor center. The binding energies of the Zn_s, Cd_s and Hg_s acceptor states in Ge_1-xSi_x increase linearly with the silicon content. This result agrees qualitatively with the concept of a virtual crystal model. Random-alloy splitting of the Zn_s, Cd_s and Hg_s impurity levels in the crystals is iscussed.