Turkish Journal of PhysicsA Simple Method to Determine Carrier Concentration Dependence of Mobility in a GaAs Modfet Structure
Abstract: A simple method of determining the relation between the sheet carrier concentration, ns, and the drift mobility, m, of the two- dimensional electron gas (2DEG) in a Modulation Doped Field Effect Transistor (MODFET), is reported. The method is valid within the regime where the well-known charge control model is obeyed. The relation between m and ns is found to be obeying the power law of m\,\,a \,\,ns0.7 at a temperature of 4.2 K for a 20nm thick spacer layered MODFET.
Turk. J. Phys., 20, (1996), 263-268.
Other articles published in the same issue: Turk. J. Phys.,vol.20,iss.3.